Correlation between Gated-Diode R-G Current and Performance Degradation of SOI n-MOSFETs after F-N Stress Test

A correlation between the gated-diode R-G current and the performance degradation of SOI n-channel MOS transistor after F-N stress test has been demonstrated in this paper. Due to increase of interface traps after F-N stress test, the generation-recombination (R-G) current of the gateddiode in the SOI-MOSFET architecture increases while the performance characteristics of MOSFET transistor such as the saturation drain current and sub-threshold slope generate degradation. From a series of experimental measurements of the gated-diode and the SOI-MOSFET DC characteristics, a linear decrease of the drain saturation current and increase of the threshold voltage as well as the like-line rise of the sub-threshold swing and the corresponding degradation of the trans-conductance are also observed. These results provide theoretical and experimental evidences for us to use the gated-diode tool to monitor SOI-MOSFET degradation.